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Svetlana Lipovskikh (Borisova)

Research Scientist
Research Project Manager
Center for Electrochemical Energy Storage

Professor: Keith Stevenson

Svetlana was born in Khabarovsk. Svetlana started her scientific career as a BSc student at the Chair of Low Temperature Physics of P.L. Kapitza Institute for Physical Problems in Moscow in 2005. In 2007-2008 she took part in a collaboration program between MIPT and Research Center in Jülich in Germany as exchange MSc student. In 2008 Svetlana moved to Germany as PhD student to continue her research in solid state physics and material sciences, focusing on process technologies, epitaxial growth and surface properties of semiconductors. Besides Svetlana also taught math and physics courses at the RWTH Aachen University. In 2012-2013 Svetlana worked as postdoc in the same laboratory at Research Centre in Jülich. Svetlana also likes music, travelling, reading books, photography and foreign languages.

Investigation of morphological features of electrode materials by transmission electron microscopy (TEM)

  1. Kampmeier, S. Borisova, L. Plucinski, M. Luysberg, G. Mussler, and D. Grützmacher, Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films, Crystal Growth and Design, 15 (1), pp 390–394 (2015)
  2. S. Borisova, J. Kampmeier, M. Luysberg, G. Mussler, and D. Grützmacher, Domain formation due to surface steps in topological insulator Bi2Te3 thin films grown on Si (111) by MBE, Appl. Phys. Lett. 103, 081902 (2013)
  3. S. Borisova, M. Luysberg, J. Krumrain, G. Mussler, and D. Grützmacher, Nucleation and Growth Dynamics of MBE-Grown Topological Insulator Bi2Te3 Films on Si (111), AIP Conference Proceedings, ICPS 2012 – 31st International Conference on the Physics of Semiconductors, AIP Conf. Proc. 1566, 191 (2013)
  4. S. Borisova, J. Krumrain, M. Luysberg, G. Mussler, and D. Grützmacher, Mode of Growth of Ultrathin Topological Insulator Bi2Te3 Films on Si (111) Substrates, Crystal Growth and Design, 12 (12), 6098 (2012)
  5. S. Borisova, Fabrication and In-situ STM Investigation of Growth Dynamics of Semiconductor Nanostructures Grown by MBE, PhD Thesis, RWTH Aachen University (2012)
  6. Krumrain, G. Mussler, S. Borisova, T. Stoica, L. Plucinski, C.M. Schneider, and D. Grützmacher, MBE Growth Optimization of Topological Insulator Bi2Te3 Films, Journal of Crystal Growth 324, 115-118 (2011)
  7. Eisele, S. Borisova, L. Ivanova, M. Dähne and Ph. Ebert, Cross-sectional scanning tunneling microscopy and spectroscopy of nonpolar GaN(1-100) surfaces, J. Vac. Sci. Technol. B 28, C5G11 (2010)
  8. Eisele, L. Ivanova, S. Borisova, M. Dähne, M. Winkelnkemper, and Ph. Ebert, Doping Modulation in GaN Imaged by Cross-Sectional Scanning Tunneling Microscopy, Applied Physics Letters 94, 162110 (2009)
  9. Ebert, L. Ivanova, S. Borisova, H. Eisele, A. Laubsch, and M. Dähne, Electronic Properties of Dislocations in GaN Investigated by Scanning Tunneling Microscopy, Applied Physics Letters 94, 062104 (2009)
  10. L.Ivanova, S. Borisova, H. Eisele, M. Dähne, A. Laubsch, and Ph. Ebert, Surface States and Origin of the Fermi Level Pinning on Nonpolar GaN(1-100) surfaces, Applied Physics Letters 93, 192110 (2008).

PhD in Physics, Faculty of Mathematics, Computer Science and Natural Sciences, RWTH Aachen University (2012)
MSc in Applied Mathematics and Physics, Chair of Low Temperature Physics and Technics, Department of General and Applied Physics,  Moscow Institute of Physics and Technology (2008)
BSc in Applied Mathematics and Physics, Chair of Low Temperature Physics and Technics, Department of General and Applied Physics,  Moscow Institute of Physics and Technology (2006)

  • Transmission electron microscopy for investigation of morphological features of electrode materials
  • Operating, upgrade and technical support of in-situ UHV STM
  • Van der Waals epitaxy of topological insulators and their alloys on non-native substrates for device fabrication
  • Artificial crystals of ultra-dense ordered Ge quantum dots for single photon detection
  • Investigation of wide band gap semiconductors (GaN) by scanning tunneling microscopy (STM)
  • High-Frequency LC-Filters for applications of low temperature physics